Miniaturized Thin Film Ceramic Band-Pass Filter BMBP2R3/1-8DC

Product Features

  • High-Precision Micro-Nanofabrication Process: Utilizes advanced micro- and nanofabrication techniques for high-precision design and performance.
  • High Performance: Offers high performance with low temperature drift and high power handling capability.
  • Specialized Substrate: Features a special substrate and 50Ω coplanar waveguide output for superior signal integrity.
  • Gold Wire Bonding: Designed for gold wire bonding, making it suitable for multi-chip integrated module applications.

Environmental Parameters

  • Operating Temperature: -55℃~+85℃
  • Storage Temperature: -55℃~+125℃
  • Maximum Input Power: 35dBm

Electrical Characteristics (TA=+25℃)

ParameterMinimumTypicalMaximumUnit
Center Frequency (f0)–2.3–GHz
Passband Frequency Range1.8–2.8GHz
Passband Ripple––1dB
Center Insertion Loss–2.0–dB
Return Loss–17–dB
Out-of-Band Attenuation≥[email protected]<br>≥[email protected]dB

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Outline Dimensions

Dimension SymbolValue (mm)MinimumNominalMaximum
A6.4–6.5–
B8.4–8.5–

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Typical Test Curves

图片10

Passband Loss VS Frequency (TA=25℃)

图片11
Out-of-Band Rejection & Return Loss VS Frequency (TA=25℃)

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