Thin Film Ceramic Band-Pass Filter
Product Features
- High-Precision Micro-Nanofabrication Process: Utilizes advanced micro- and nanofabrication techniques for high-precision design and performance.
- High Performance: Offers high performance with low temperature drift and high power handling capability.
- Specialized Substrate: Features a special substrate and 50Ω coplanar waveguide output for superior signal integrity.
- Gold Wire Bonding: Designed for gold wire bonding, making it suitable for multi-chip integrated module applications.
Environmental Parameters
- Operating Temperature: -55℃~+85℃
- Storage Temperature: -55℃~+125℃
- Maximum Input Power: 35dBm
- Electrical Characteristics (TA=+25℃):
Electrical Characteristics (TA=+25℃)
| Parameter | Minimum | Typical | Maximum | Unit |
| Center Frequency (f0) | – | 2.3 | – | GHz |
| Passband Frequency Range | 2.06 | – | 2.55 | GHz |
| Passband Ripple | – | – | 1 | dB |
| Center Insertion Loss | – | 2.0 | – | dB |
| Return Loss | – | 16 | – | dB |
| Out-of-Band Attenuation | ≥[email protected]<br>≥[email protected] | dB |
Outline Dimensions
Outline Dimensions
| Dimension Symbol | Value (mm) | Minimum | Nominal | Maximum |
| A | 5.4 | – | 5.5 | – |
| B | 7.4 | – | 7.5 | – |
Typical Test Curves
